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Sunday, August 22, 2004

 

90nm Opterons, Athlons to use strained Si

`The strained silicon process involves applying a separate material, such as Silicon Germanium, to silicon wafers. The SiGe’s atoms are more widely spaced than those in the regular silicon crystal lattice, which ‘strains’ to align itself with the wider-spaced SiGe lattice. The upshot is more room for electrons to move between the lattice-locked nuclei, improving the semiconductor’s electrical properties.’




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